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MDF1903 - Single N-channel Trench MOSFET

Description

The MDF1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDF1903 is suitable device for DC to DC converter and general purpose applications.

Features

  •  VDS = 100V  ID = 12A @VGS = 10V  RDS(ON) (MAX) < 110mΩ @VGS = 10V < 115mΩ @VGS = 6.0V 100% UIL Tested D GDS G S Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Characteristics Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case TC=25oC TC=70oC TC.

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Datasheet preview – MDF1903

Datasheet Details

Part number MDF1903
Manufacturer MagnaChip
File Size 1.54 MB
Description Single N-channel Trench MOSFET
Datasheet download datasheet MDF1903 Datasheet
Additional preview pages of the MDF1903 datasheet.

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Full PDF Text Transcription

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MDF1903 – Single N-Channel Trench MOSFET 100V MDF1903 Single N-channel Trench MOSFET 100V, 12A, 110mΩ ㄹ General Description The MDF1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDF1903 is suitable device for DC to DC converter and general purpose applications. Features  VDS = 100V  ID = 12A @VGS = 10V  RDS(ON) (MAX) < 110mΩ @VGS = 10V < 115mΩ @VGS = 6.
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