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MDF1933 - N-Channel MOSFET

Description

The MDF1933 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDF1933 is suitable device for Synchronous Rectification for Server / Adapter and general purpose applications.

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Features

  •  VDS = 80V  ID = 43A @VGS = 10V  RDS(ON) < 7.5 mΩ @VGS = 10V  100% UIL Tested TO-220F D G S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC (Silicon Limited) TC=100oC TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junc.

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Datasheet Details

Part number MDF1933
Manufacturer MagnaChip
File Size 1.24 MB
Description N-Channel MOSFET
Datasheet download datasheet MDF1933 Datasheet
Additional preview pages of the MDF1933 datasheet.

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Full PDF Text Transcription

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MDF1933– Single N-Channel Trench MOSFET 80V MDF1933 Single N-channel Trench MOSFET 80V, 43A, 7.5mΩ General Description The MDF1933 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDF1933 is suitable device for Synchronous Rectification for Server / Adapter and general purpose applications. . Features  VDS = 80V  ID = 43A @VGS = 10V  RDS(ON) < 7.
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