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MDF3752TH - P-Channel Trench MOSFET

General Description

The MDF3752TH uses advanced Magnachip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability.

Low RDS(ON), Low Gate Charge can be offering superior benefit in the application.

Key Features

  •  VDS = -40V  ID = -36.5A @VGS = -10V  RDS(ON) < 17mΩ @ VGS = -10V < 25mΩ @ VGS = -4.5V.

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Datasheet Details

Part number MDF3752TH
Manufacturer MagnaChip
File Size 1.02 MB
Description P-Channel Trench MOSFET
Datasheet download datasheet MDF3752TH Datasheet

Full PDF Text Transcription for MDF3752TH (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MDF3752TH. For precise diagrams, and layout, please refer to the original PDF.

MDF3752TH– P-Channel Trench MOSFET MDF3752TH P-Channel Trench MOSFET, -40V, -36.5A, 17mΩ General Description The MDF3752TH uses advanced Magnachip’s Trench MOSFET Technol...

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cription The MDF3752TH uses advanced Magnachip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. Low RDS(ON), Low Gate Charge can be offering superior benefit in the application. Features  VDS = -40V  ID = -36.5A @VGS = -10V  RDS(ON) < 17mΩ @ VGS = -10V < 25mΩ @ VGS = -4.