MDF9N50F
MDF9N50F is N-Channel MOSFET manufactured by MagnaChip.
Description
The MDF9N50F uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDF9N50F is suitable device for SMPS, HID and general purpose applications.
Features
- VDS = 500V
- ID = 8.0A @VGS = 10V
- RDS(ON) ≤ 0.9Ω @VGS = 10V
Applications
- Power Supply
- HID
- Lighting
G DS
Absolute Maximum Ratings (Ta = 25o C)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature
TC=25o C TC=100o C
TC=25o C Derate above 25 o C
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
Aug 2011. Version 1.0
Symbol VDSS...
