MDIS5N50
MDIS5N50 is N-Channel MOSFET manufactured by MagnaChip.
Description
The MDIS5N50 uses advanced Magnachip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality.
MDIS5N50 is suitable device for SMPS, HID and general purpose applications.
Features
- VDS = 500V
- VDS = 550V @ Tjmax
- ID = 4.4A
@VGS = 10V
- RDS(ON) ≤ 1.4Ω @VGS = 10V
Applications
- Power Supply
- PFC
- Ballast
TO-251-VS (IPAK-VS)
Absolute Maximum Ratings (Ta = 25o C)
Characteristics Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
TC=25o C TC=100o C
TC=25o C Derate above 25 o C
Symbol VDSS
VDSS @ Tjmax VGSS
Dv/dt EAS TJ, Tstg
Rating 500 550 ±30 4.4 2.8 17.6 70 0.56 4.5 230
-55~150
Unit V V V A A A W
W/ o C V/ns m J o C
Symbol RθJA RθJC
Rating 62.5 1.8
Unit o C/W
Jan. 2021. Version1.1
Magnachip Semiconductor...
