MDP10N60G Overview
Description
These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Key Features
- VDS = 600V VDS = 660V ID = 10A RDS(ON) ≤ 0.7Ω
