Datasheet Details
| Part number | MDP1991 |
|---|---|
| Manufacturer | MagnaChip |
| File Size | 1.09 MB |
| Description | N-channel MOSFET |
| Datasheet |
 MDP1991 Datasheet
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General Description
The MDP1991 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDP1991 is suitable device for DC/DC Converter and general purpose applications.
Key Features
- VDS = 100V ID = 120A @VGS = 10V RDS(ON) < 5.9 mΩ @VGS = 10V D GD S TO-220 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Therm.