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MDP20N116PTTH - N-channel MOSFET

Features

  • MV MOSFET GEN3T technology.
  • N-channel, normal level.
  • Enhanced avalanche ruggedness.
  • 100% UIS and Rg tested.
  • Maximum 175°C junction temperature.

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Datasheet preview – MDP20N116PTTH

Datasheet Details

Part number MDP20N116PTTH
Manufacturer MagnaChip
File Size 617.18 KB
Description N-channel MOSFET
Datasheet download datasheet MDP20N116PTTH Datasheet
Additional preview pages of the MDP20N116PTTH datasheet.

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Full PDF Text Transcription

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Magnachip Power Technology MDP20N116PTTH MDP20N116PTTH Single N-channel Trench MOSFET 200V 11.6mΩ 95A FEATURES • MV MOSFET GEN3T technology • N-channel, normal level • Enhanced avalanche ruggedness • 100% UIS and Rg tested • Maximum 175°C junction temperature APPLICATIONS • DC/DC and AC/DC converters • Brushed and BLDC Motor drive systems • Battery powered systems KEY PERFORMANCE PARAMETERS VDS RDS(on), typ. 200 V 0.0106 Ω ID 95 A QG, typ. Junction temperature, max. 83 nC 175 oC TO-220 G DS Top View Bottom View D G S ORDERING INFORMATION Type / Ordering Code MDP20N116PTTH Package TO-220 http://www.magnachip.com/ Marking MDP20N116 Packing Tube RoHS Status Halogen Free May. 2022. ver. 1.
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