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MDS1527 - N-Channel Trench MOSFET

General Description

The MDS1527 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDS1527 is suitable for DC/DC converter and general purpose applications.

Key Features

  •  VDS = 30V  ID = 13.1A @VGS = 10V  RDS(ON) < 15.9mΩ @VGS = 10V < 23.7mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=70oC TA=25oC TA=70oC TC=25oC TC=70oC TA=25oC TA=70oC Thermal Characterist.

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Datasheet Details

Part number MDS1527
Manufacturer MagnaChip
File Size 1.00 MB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDS1527 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDS1527 – Single N-Channel Trench MOSFET 30V MDS1527 Single N-channel Trench MOSFET 30V, 13.1A, 15.9mΩ General Description The MDS1527 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDS1527 is suitable for DC/DC converter and general purpose applications. Features  VDS = 30V  ID = 13.1A @VGS = 10V  RDS(ON) < 15.9mΩ @VGS = 10V < 23.7mΩ @VGS = 4.