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MDS1903 - Single N-channel MOSFET

Datasheet Summary

Description

The MDS1903 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDS1903 is suitable device for DC to DC converter and general purpose applications.

Features

  •  VDS = 100V  ID = 3.3A @VGS = 10V  RDS(ON) (MAX) < 110mΩ @VGS = 10V < 120mΩ @VGS = 6.0V 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) D G S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction.

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Datasheet Details

Part number MDS1903
Manufacturer MagnaChip
File Size 1.07 MB
Description Single N-channel MOSFET
Datasheet download datasheet MDS1903 Datasheet
Additional preview pages of the MDS1903 datasheet.

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Full PDF Text Transcription

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MDS1903 – Single N-Channel Trench MOSFET 100V MDS1903 Single N-channel Trench MOSFET 100V, 3.3A, 110mΩ ㄹ General Description The MDS1903 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDS1903 is suitable device for DC to DC converter and general purpose applications. Features  VDS = 100V  ID = 3.3A @VGS = 10V  RDS(ON) (MAX) < 110mΩ @VGS = 10V < 120mΩ @VGS = 6.
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