MDS1951 Datasheet | MagnaChip

Description The MDS1951 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. Features  VDS = 60V  ID = 6A @VGS = 10V  RDS(ON) < 45mΩ @ VGS = 10V < 55mΩ @ VGS = 4.5V Applications  Inverters  General purpose applications 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) Absolute Maximum Ratings (Ta =25o C unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(2) Characteristics Pulsed Drain Current Power Dissipation for Single Operation Single Pulse Avalanche Energy(3) Junction and Storage Temperature Range TA=25o C TA=70o C TA=25o C TA=70o C Symbol VDSS VGSS EAS TJ, Tstg Thermal Characteristic Characteristics Thermal Resistance, Junction-to-Ambient (Steady-State)(1) Thermal Resistance, Junction-to-Case Symbol RθJA RθJC June...