Datasheet4U Logo Datasheet4U.com

MDT10N023RH - N-channel MOSFET

General Description

The MDT10N023RH uses advanced Magnachip’s MOSFET technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality.

Key Features

  • Magnachip’s MOSFET Technology.
  • Very low on-resistance RDS(on).
  • 100% Avalanche / Rg Tested.

📥 Download Datasheet

Datasheet Details

Part number MDT10N023RH
Manufacturer MagnaChip
File Size 488.41 KB
Description N-channel MOSFET
Datasheet download datasheet MDT10N023RH Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MDT1005 8-bit micro-controller Micon Design Technology
MDT1010 8-bit micro-controller Micon Design Technology
MDT1020 8-bit micro-controller Micon Design Technology
MDT1030 8-bit micro-controller Micon Design Technology
MDT1051 8-bit micro-controller Micon Design Technology

Other Datasheets by MagnaChip

Part Number Description
MDT14N043RH N-channel MOSFET
MDT15N054PTRH N-channel MOSFET
MDT08N017RH N-channel MOSFET
MDT20N109PTRH N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Magnachip Power Technology MDT10N023RH MDT10N023RH Single N-channel Trench MOSFET 100V 2.3mΩ 300A General description The MDT10N023RH uses advanced Magnachip’s MOSFET technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as high power drives of E-Vehicles(E-bike), DC/DC converter and BMS, general purpose applications. Features and benefits • Magnachip’s MOSFET Technology • Very low on-resistance RDS(on) • 100% Avalanche / Rg Tested Applications • Motor Inverter • Battery Management • Power Inverter Key performance parameters VDS 100 V RDS(on), max 0.