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MDU1511RH - Single N-channel Trench MOSFET

This page provides the datasheet information for the MDU1511RH, a member of the MDU1511 Single N-channel Trench MOSFET family.

Datasheet Summary

Description

The MDU1511 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDU1511 is suitable device for DC/DC Converter and general purpose applications.

Features

  • VDS = 30V ID = 100A @VGS = 10V RDS(ON) < 2.4 mΩ @VGS = 10V < 3.3 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested D D D D D D D D D S S S G G S S S G PowerDFN56 S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage TC=25 C Continuous Drain Current (1) TC=70 C TA=25 C TA=70oC Pulsed Drain Current TC=25 C TC=70 C Power Dissipation TA=25 C TA=70oC Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range EAS TJ, Tstg o o o o.

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Datasheet preview – MDU1511RH

Datasheet Details

Part number MDU1511RH
Manufacturer MagnaChip
File Size 962.35 KB
Description Single N-channel Trench MOSFET
Datasheet download datasheet MDU1511RH Datasheet
Additional preview pages of the MDU1511RH datasheet.

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Full PDF Text Transcription

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MDU1511 – Single N-Channel Trench MOSFET 30V ㅊ MDU1511 Single N-channel Trench MOSFET 30V, 100.0A, 2.4mΩ General Description The MDU1511 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1511 is suitable device for DC/DC Converter and general purpose applications. Features VDS = 30V ID = 100A @VGS = 10V RDS(ON) < 2.4 mΩ @VGS = 10V < 3.3 mΩ @VGS = 4.
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