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MDU1511RH - Single N-channel Trench MOSFET

Download the MDU1511RH datasheet PDF. This datasheet also covers the MDU1511 variant, as both devices belong to the same single n-channel trench mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The MDU1511 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDU1511 is suitable device for DC/DC Converter and general purpose applications.

Key Features

  • VDS = 30V ID = 100A @VGS = 10V RDS(ON) < 2.4 mΩ @VGS = 10V < 3.3 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested D D D D D D D D D S S S G G S S S G PowerDFN56 S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage TC=25 C Continuous Drain Current (1) TC=70 C TA=25 C TA=70oC Pulsed Drain Current TC=25 C TC=70 C Power Dissipation TA=25 C TA=70oC Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range EAS TJ, Tstg o o o o.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MDU1511-MagnaChip.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MDU1511RH
Manufacturer MagnaChip
File Size 962.35 KB
Description Single N-channel Trench MOSFET
Datasheet download datasheet MDU1511RH Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MDU1511 – Single N-Channel Trench MOSFET 30V ㅊ MDU1511 Single N-channel Trench MOSFET 30V, 100.0A, 2.4mΩ General Description The MDU1511 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1511 is suitable device for DC/DC Converter and general purpose applications. Features VDS = 30V ID = 100A @VGS = 10V RDS(ON) < 2.4 mΩ @VGS = 10V < 3.3 mΩ @VGS = 4.