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MDU1531S - N-Channel MOSFET

Description

The MDU1531S uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDU1531S is suitable device for DC/DC Converter and general purpose applications.

Features

  •  VDS = 30V  ID = 32A @VGS = 10V  RDS(ON) < 2.80 mΩ @VGS = 10V < 3.45 mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested  SBD Built In D S SSG GS SS G PDFN56 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC (Silicon Limited) TC=25oC (Package Limited) TA=25oC TA=70oC TC=25oC TA=25oC Symbol VDS.

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Datasheet preview – MDU1531S

Datasheet Details

Part number MDU1531S
Manufacturer MagnaChip
File Size 1.00 MB
Description N-Channel MOSFET
Datasheet download datasheet MDU1531S Datasheet
Additional preview pages of the MDU1531S datasheet.

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Full PDF Text Transcription

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MDU1531S – Single N-Channel Trench MOSFET 30V 7.9 MDU1531S Single N-channel Trench MOSFET 30V General Description The MDU1531S uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1531S is suitable device for DC/DC Converter and general purpose applications. DD DD DD DD Features  VDS = 30V  ID = 32A @VGS = 10V  RDS(ON) < 2.80 mΩ @VGS = 10V < 3.45 mΩ @VGS = 4.
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