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MDU1531S - N-Channel MOSFET

General Description

The MDU1531S uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDU1531S is suitable device for DC/DC Converter and general purpose applications.

Key Features

  •  VDS = 30V  ID = 32A @VGS = 10V  RDS(ON) < 2.80 mΩ @VGS = 10V < 3.45 mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested  SBD Built In D S SSG GS SS G PDFN56 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC (Silicon Limited) TC=25oC (Package Limited) TA=25oC TA=70oC TC=25oC TA=25oC Symbol VDS.

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Datasheet Details

Part number MDU1531S
Manufacturer MagnaChip
File Size 1.00 MB
Description N-Channel MOSFET
Datasheet download datasheet MDU1531S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDU1531S – Single N-Channel Trench MOSFET 30V 7.9 MDU1531S Single N-channel Trench MOSFET 30V General Description The MDU1531S uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1531S is suitable device for DC/DC Converter and general purpose applications. DD DD DD DD Features  VDS = 30V  ID = 32A @VGS = 10V  RDS(ON) < 2.80 mΩ @VGS = 10V < 3.45 mΩ @VGS = 4.