MDU5593S
MDU5593S is Dual N-Channel Trench MOSFET manufactured by MagnaChip.
Description
The MDU5593S uses advanced Magna Chip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU5593S is suitable for DC/DC converter and general purpose applications.
Features
FET1
FET2
VDS = 30V ID = 34A
VDS = 30V ID = 40A @VGS = 10V
RDS(ON) < 8.0mΩ < 11.0mΩ
< 3.3mΩ @VGS = 10V < 5.0mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
5 S1/D2
S2
S2 S2
7 G2
1 2 3 4
D1 3 D1
D1
G1
Absolute Maximum Ratings (Ta = 25o C)
Characteristics
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (1)
Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2)
TC=25o C (Silicon Limited) TC=25o C (Package Limited) TA=25o C
TC=25o C TA=25o C
Junction and Storage Temperature Range
Symbol VDSS VGSS
IDM PD EAS TJ, Tstg
FET1
FET2
±20...
