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MDU5593S - Dual N-Channel Trench MOSFET

Description

The MDU5593S uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDU5593S is suitable for DC/DC converter and general purpose applications.

Features

  • FET1 FET2  VDS = 30V  ID = 34A VDS = 30V ID = 40A @VGS = 10V  RDS(ON) < 8.0mΩ < 11.0mΩ < 3.3mΩ @VGS = 10V < 5.0mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested 5 S1/D2 S2 6 S2 S2 7 G2 8 1 2 3 4 D1 3 D1 2 D1 1 G1 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TA=25oC TC=.

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Datasheet Details

Part number MDU5593S
Manufacturer MagnaChip
File Size 1.45 MB
Description Dual N-Channel Trench MOSFET
Datasheet download datasheet MDU5593S Datasheet

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Full PDF Text Transcription

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MDU5593S - Dual N-Channel Trench MOSFET 30V MDU5593S Dual Asymmetric N-channel Trench MOSFET 30V General Description The MDU5593S uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU5593S is suitable for DC/DC converter and general purpose applications. Features FET1 FET2  VDS = 30V  ID = 34A VDS = 30V ID = 40A @VGS = 10V  RDS(ON) < 8.0mΩ < 11.0mΩ < 3.3mΩ @VGS = 10V < 5.0mΩ @VGS = 4.
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