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MDV10N1K1 - Single N-channel Trench MOSFET

Description

The MDV10N1K1 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDV10N1K1 is suitable device for DC to DC converter, Load Switch and general purpose applications.

Features

  •  VDS = 100V  ID = 12.3A @VGS = 10V  RDS(ON) (MAX) < 110mΩ @VGS = 10V < 116mΩ @VGS = 6.0V  100% UIL Tested DD DD DD DD D S SSG GS SS PDFN33 G S Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current (2) Power Dissipation Single Pulse Avalanche Energy (3) Junction and Storage Temperature Range TC=25oC TC=70oC TC=25oC TC=70oC Thermal Characteristics Characteristics Thermal Resistance, Junctio.

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Datasheet Details

Part number MDV10N1K1
Manufacturer MagnaChip
File Size 942.90 KB
Description Single N-channel Trench MOSFET
Datasheet download datasheet MDV10N1K1 Datasheet
Additional preview pages of the MDV10N1K1 datasheet.

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Full PDF Text Transcription

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MDV10N1K1 – Single N-Channel Trench MOSFET 100V MDV10N1K1 Single N-channel Trench MOSFET 100V, 12.3A, 110mΩ ㄹ General Description The MDV10N1K1 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV10N1K1 is suitable device for DC to DC converter, Load Switch and general purpose applications. Features  VDS = 100V  ID = 12.3A @VGS = 10V  RDS(ON) (MAX) < 110mΩ @VGS = 10V < 116mΩ @VGS = 6.
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