Datasheet Details
| Part number | MDV10N1K1 |
|---|---|
| Manufacturer | MagnaChip |
| File Size | 942.90 KB |
| Description | Single N-channel Trench MOSFET |
| Datasheet |
 MDV10N1K1 Datasheet
|
|
|
General Description
The MDV10N1K1 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDV10N1K1 is suitable device for DC to DC converter, Load Switch and general purpose applications.
Key Features
- VDS = 100V ID = 12.3A @VGS = 10V RDS(ON) (MAX) < 110mΩ @VGS = 10V < 116mΩ @VGS = 6.0V 100% UIL Tested DD DD DD DD D S SSG GS SS PDFN33 G S Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current (2) Power Dissipation Single Pulse Avalanche Energy (3) Junction and Storage Temperature Range TC=25oC TC=70oC TC=25oC TC=70oC Thermal Characteristics Characteristics Thermal Resistance, Junctio.