MDV10N1K1
MDV10N1K1 is Single N-channel Trench MOSFET manufactured by MagnaChip.
Description
The MDV10N1K1 uses advanced Magna Chip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV10N1K1 is suitable device for DC to DC converter, Load Switch and general purpose applications.
Features
VDS = 100V ID = 12.3A @VGS = 10V RDS(ON) (MAX)
< 110mΩ @VGS = 10V < 116mΩ @VGS = 6.0V 100% UIL Tested
DD DD
DD DD
S SSG
GS SS
PDFN33
Absolute Maximum Ratings (Tc = 25o C)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current (2)
Power Dissipation
Single Pulse Avalanche Energy (3) Junction and Storage Temperature Range
TC=25o C TC=70o C
TC=25o C TC=70o C
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case
Symbol VDSS VGSS
EAS TJ, Tstg
Rating 100 ±20 12.3 9.9 49 36.8 23.5 14
-55~150
Unit V V
W m J o C
Symbol RθJA RθJC
Rating 36 3.4
Unit o C/W
Sep. 2016. Version 1.1
1 Magna Chip Semiconductor Ltd.
- Single N-Channel Trench MOSFET...
