Datasheet Details
| Part number | MDV1951B |
|---|---|
| Manufacturer | MagnaChip |
| File Size | 1.06 MB |
| Description | N-Channel MOSFET |
| Datasheet |
 MDV1951B Datasheet
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Description
The MDV1951 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDV1951 is suitable for DC/DC converter and general purpose applications.
Features
- VDS = 60V ID = 12A @VGS = 10V RDS(ON) < 45mΩ @VGS = 10V < 55mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested DD DD DD DD D S SSG GS SS PDFN33 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC (Silicon limited) TC=25oC (Package limited) TC=70oC TA=25oC TA=70oC TC=25oC TC=70oC TA=25oC TA=7.