MDWC0151ERH
MDWC0151ERH is Common-Drain Dual N-Channel Trench MOSFET manufactured by MagnaChip.
Description
The MDWC0151ERH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance and excellent reliability. Excellent low RSS(ON), low gate charge operation and operation for Battery Application.
Features
- VSS = 24V
- Source-Source ON Resistance;
RSS(ON) max. 2.8mΩ @ VGS = 4.5V RSS(ON) max. 3.1mΩ @ VGS = 3.8V RSS(ON) max. 3.6mΩ @ VGS = 3.1V RSS(ON) max. 4.6mΩ @ VGS = 2.5V
Applications
- Portable Battery Protection
Bottom View
3.2mm- 2.1mm WLCSP
1, 2, 4, 5. Source1 (FET1) 6, 7, 9, 10. Source2 (FET2)
3. Gate1 (FET1) 8. Gate2 (FET2)
Absolute Maximum Ratings (TA = 25o C unless otherwise noted)
Characteristics
Symbol
Source-Source Voltage
Gate-Source Voltage
Source Current
DC- 1 Pulse
Total Power Dissipation
DC- 1
Channel Temperature
Junction and Storage Temperature Range
VSSS VGSS
IS ISP PD Tch TJ, Tstg
Thermal Characteristics
Thermal Resistance
Characteristics
Symbol RθJA
Rating 24 ±12 22 88 2.2 150
-55~150
Units V V A A W o C o C
Rating 57
Unit o C/W
Jan. 2021. Rev 1.1
Magnachip Semiconductor Ltd.
MDWC0151ERH- mon-Drain Dual N-Channel Trench MOSFET 24V Datasheet
Ordering Information
Part Number...
