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MDWC0151ERH - Common-Drain Dual N-Channel Trench MOSFET

General Description

The MDWC0151ERH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance and excellent reliability.

Excellent low RSS(ON), low gate charge operation and operation for Battery Application.

Key Features

  • - VSS = 24V - Source-Source ON Resistance; RSS(ON) max. 2.8mΩ @ VGS = 4.5V RSS(ON) max. 3.1mΩ @ VGS = 3.8V RSS(ON) max. 3.6mΩ @ VGS = 3.1V RSS(ON) max. 4.6mΩ @ VGS = 2.5V.

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Datasheet Details

Part number MDWC0151ERH
Manufacturer MagnaChip
File Size 572.19 KB
Description Common-Drain Dual N-Channel Trench MOSFET
Datasheet download datasheet MDWC0151ERH Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDWC0151ERH– Common-Drain Dual N-Channel Trench MOSFET 24V Datasheet MDWC0151ERH Common-Drain Dual N-Channel Trench MOSFET 24V, 22A, 2.8 mΩ General Description The MDWC0151ERH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance and excellent reliability. Excellent low RSS(ON), low gate charge operation and operation for Battery Application. Features - VSS = 24V - Source-Source ON Resistance; RSS(ON) max. 2.8mΩ @ VGS = 4.5V RSS(ON) max. 3.1mΩ @ VGS = 3.8V RSS(ON) max. 3.6mΩ @ VGS = 3.1V RSS(ON) max. 4.6mΩ @ VGS = 2.5V Applications - Portable Battery Protection Bottom View 3.2mm*2.1mm WLCSP 1, 2, 4, 5. Source1 (FET1) 6, 7, 9, 10. Source2 (FET2) 3. Gate1 (FET1) 8.