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MDZ1N60 - N-Channel Trench MOSFET

Description

The MDZ1N60 uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality.

MDZ1N60 is suitable device for SMPS, compact ballast, battery charger and general purpose applications.

Features

  • VDS = 600V.
  • ID = 0.4A.
  • RDS(ON) ≤ 8.5Ω @VGS = 10V @VGS = 10V.

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Datasheet Details

Part number MDZ1N60
Manufacturer MagnaChip
File Size 954.56 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDZ1N60 Datasheet

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MDZ1N60 N-channel MOSFET 600V MDZ1N60 N-Channel MOSFET 600V, 0.4 A, 8.5Ω General Description The MDZ1N60 uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality. MDZ1N60 is suitable device for SMPS, compact ballast, battery charger and general purpose applications. Features  VDS = 600V  ID = 0.4A  RDS(ON) ≤ 8.
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