MMD60R580RZ - N-channel MOSFET

MagnaChip

General Description

MMD60R580RZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge.

This device combines improvement of switching speed with effective switching behavior.

Key Features

Low Power Loss by High Speed Switching and Low On-Resistance.
Excellent ESD robustness.
100% Avalanche Tested.
Green Package-Pb Free Plating, Halogen Free.
Zener-Integrated.

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MMD60R580RZ n-channel mosfet by MagnaChip - Datasheet Preview

Datasheet Details

Part number	MMD60R580RZ
Manufacturer	MagnaChip
File Size	735.15 KB
Description	N-channel MOSFET
Datasheet	MMD60R580RZ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MMD60R580RZ Datasheet MMD60R580RZ 600V 0.58Ω N-channel MOSFET  Description MMD60R580RZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. This device combines improvement of switching speed with effective switching behavior. And it also will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters  Package & Internal Circuit Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.58 3 8 12.