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MME65R280Q - N-channel MOSFET

Description

MME65R280Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge.

It will provide much high efficiency by using optimized charge coupling technology.

Features

  • Low power loss by high speed switching and low on-resistance.
  • 100% avalanche tested.
  • Green package.
  • Pb-free plating, Halogen-free.

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Datasheet Details

Part number MME65R280Q
Manufacturer MagnaChip
File Size 1.56 MB
Description N-channel MOSFET
Datasheet download datasheet MME65R280Q Datasheet
Additional preview pages of the MME65R280Q datasheet.

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MME65R280Q Datasheet MME65R280Q 650V 0.28Ω N-channel MOSFET  Description MME65R280Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj, max RDS(on), max VGS(th), typ ID Qg, typ Value 700 0.28 3 13.8 27.
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