MME65R280Q
Description
MME65R280Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as low switching loss.
- Key Parameters
Parameter VDS @ Tj, max RDS(on), max
VGS(th), typ ID
Qg, typ
Value 700 0.28
3 13.8 27.8
Unit V Ω V A n C
- Package & Internal Circuit
- Features
- Low power loss by high speed switching and low on-resistance
- 100% avalanche tested
- Green package
- Pb-free plating, Halogen-free
- Applications
- PFC power supply stages
- Switching applications
- Adapter
- Ordering Information
Order Code MME65R280QRH
Marking Temp. Range 65R280Q -55 ~ 150o C
Package TO-263
Packing Reel
Ro HS Status pliant
May. 2021. Revision 1.2
Magnachip Semiconductor Ltd.
MME65R280Q Datasheet
- Absolute Maximum Rating (Tc=25o C unless...
