Datasheet4U Logo Datasheet4U.com

MMFA60R650RFZ - N-channel MOSFET

Description

MMFA60R650RFZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge.

It will provide much high efficiency by using optimized charge coupling technology.

Features

  • Ultra-fast Body Diode.
  • Low Power Loss by High Speed Switching and Low On-Resistance.
  • 100% Avalanche Tested.
  • Green Package.
  • Pb Free Plating, Halogen Free.
  • Zener - Integrated.

📥 Download Datasheet

Datasheet preview – MMFA60R650RFZ

Datasheet Details

Part number MMFA60R650RFZ
Manufacturer MagnaChip
File Size 737.23 KB
Description N-channel MOSFET
Datasheet download datasheet MMFA60R650RFZ Datasheet
Additional preview pages of the MMFA60R650RFZ datasheet.

📁 Similar Datasheet

  • MMF-12 - Melf Metal Film Resistors (YAGEO)
  • MMF-25 - Melf Metal Film Resistors (YAGEO)
  • MMF-50 - Melf Metal Film Resistors (YAGEO)
  • MMF1000Y010DK1 - FRED (MacMic)
  • MMF100A - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE (SUNMATE)
  • MMF100A - 200W Surface Mount Transient Voltage Suppressors (SEMITECH)
  • MMF100CA - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE (SUNMATE)
  • MMF100CA - 200W Surface Mount Transient Voltage Suppressors (SEMITECH)
  • MMF100N120B - FRED (MacMic)
  • MMF100S170B - FRED (MacMic)
Other Datasheets by MagnaChip

Full PDF Text Transcription

Click to expand full text
MMFA60R650RFZ Datasheet MMFA60R650RFZ 600V 0.65Ω N-channel MOSFET  Description MMFA60R650RFZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters  Package & Internal Circuit Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.650 4.0 8.0 13.
Published: |