MagnaChip MMSF60R360RZ
MMSF60R360RZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. This device combines improvement of switching speed with effective switching behavior. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.| Part No. | MMSF60R360RZ |
|---|---|
| Datasheet | MMSF60R360RZ Download |
| Manufacturer |  MagnaChip |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
And it also will provide much high efficiency by using optimized charge coupling technology.●
KEY PARAMETERS
Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.36 3 11 19.4 Unit V Ω V A nC● Package & Internal Circuit D GDS G S
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FEATURES
● Low Power Loss by High Speed Switching and Low On-Resistance● Excellent ESD robustness
● 100% Avalanche Tested
● Green Package-Pb Free Plating, Halogen Free
● Zener-Integrated
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APPLICATIONS
● PFC Power Supply Stages● Switching
APPLICATIONS
● Adapter● DC-DC Converters
● Ordering Information Order Code Marking Temp. Range MMSF60R360RZTH 60R360RZ -55 ~ 150oC Package TO-220SF Packing Tube RoHS Status Compliant Apr. 2022 Revision 1.1 1 Magnachip Semiconductor Ltd. MMSF60R360RZ Datasheet
● Absolute Maximum Rating (Tc=25oC unless otherwise specified) Parameter Drain - Source voltage Gate - Source voltage Symbol VDSS VGSS Continuous drain current (1) ID Pulsed drain current (2) Power dissipation Single - pulse avalanche energy...
