Datasheet4U Logo Datasheet4U.com

MMSF60R580Q - N-channel MOSFET

Description

MMSF(A)60R580Q is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge.

It will provide much high efficiency by using optimized charge coupling technology.

Features

  • Low Power Loss by High Speed Switching and Low On-Resistance.
  • 100% Avalanche Tested.
  • Green Package.
  • Pb Free Plating, Halogen Free.

📥 Download Datasheet

Datasheet preview – MMSF60R580Q

Datasheet Details

Part number MMSF60R580Q
Manufacturer MagnaChip
File Size 1.45 MB
Description N-channel MOSFET
Datasheet download datasheet MMSF60R580Q Datasheet
Additional preview pages of the MMSF60R580Q datasheet.

📁 Similar Datasheet

  • MMSF10N02Z - SINGLE TMOS POWER MOSFET (Motorola)
  • MMSF10N02Z - Power MOSFET (ON Semiconductor)
  • MMSF10N03Z - Power MOSFET (ON Semiconductor)
  • MMSF10N03Z - SINGLE TMOS POWER MOSFET (Motorola)
  • MMSF1308 - Power MOSFET (ON Semiconductor)
  • MMSF1308R2 - Power MOSFET (ON Semiconductor)
  • MMSF1310 - Power MOSFET (ON Semiconductor)
  • MMSF2P02E - SINGLE TMOS POWER MOSFET (Motorola)
  • MMSF3205 - SINGLE TMOS POWER MOSFET (Motorola)
  • MMSF3300 - SINGLE TMOS POWER MOSFET (Motorola)
Other Datasheets by MagnaChip

Full PDF Text Transcription

Click to expand full text
MMSF60R580Q Datasheet MMSF60R580Q 600V 0.58Ω N-channel MOSFET  Description MMSF(A)60R580Q is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.
Published: |