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MS2H30065V1 - Silicon Carbide Diode

Key Features

  • -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Benefits -Higher safety margin against overvoltage -Improved efficiency all load conditions -Increased efficiency compared to Silicon Diode alternatives -Reduction of Heat Sink Requirements -Parallel Devices Without Thermal Runaway -Essentialy No Switching Losses.

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Datasheet Details

Part number MS2H30065V1
Manufacturer Maple Semiconductor
File Size 323.90 KB
Description Silicon Carbide Diode
Datasheet download datasheet MS2H30065V1 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MS2H30065V1 MS2H30065V1 650V Silicon Carbide Diode Features -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Benefits -Higher safety margin against overvoltage -Improved efficiency all load conditions -Increased efficiency compared to Silicon Diode alternatives -Reduction of Heat Sink Requirements -Parallel Devices Without Thermal Runaway -Essentialy No Switching Losses Applications -Switch Mode Power Supplies -Power Factor Correction -Motor Drives -HID Lighting Package Type : TO-247-3Lead AC A A C A Absolute Maximum Ratings TC = 25 ℃ unless otherwise noted Symbol Parameter MS2H30065V1 VRRM VRSM VDC IF IFRM IFS