MSB120N08G Description
This Power MOSFET is produced using Maple semi‘s advanced technology. which provides high performance in on-state resistance, fast switching performance and excellent quality. MSP120N08G suitable device forSynchronous Rectification For Server and general purpose applications.
MSB120N08G Key Features
- 120A, 80V, RDS(TYP) = 5.5mΩ@VGS = 10 V
- Low gate charge ( typical 59 nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability