Datasheet Details
| Part number | MSB120N08G |
|---|---|
| Manufacturer | Maple Semiconductor |
| File Size | 758.38 KB |
| Description | 80V N-Channel MOSFET |
| Datasheet |
 MSB120N08G Datasheet
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General Description
This Power MOSFET is produced using Maple semi‘s advanced technology.
which provides high performance in on-state resistance, fast switching performance and excellent quality.
MSP120N08G suitable device forSynchronous Rectification For Server and general purpose applications.
Key Features
- - 120A, 80V, RDS(TYP) = 5.5mΩ@VGS = 10 V - Low gate charge ( typical 59 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2).