MSB120N08G
MSB120N08G is 80V N-Channel MOSFET manufactured by Maple Semiconductor.
Description
This Power MOSFET is produced using Maple semi‘s advanced technology. which provides high performance in on-state resistance, fast switching performance and excellent quality. MSP120N08G suitable device for Synchronous Rectification For Server and general purpose applications.
LEAD FREE
Pb
Ro HS
Features
- 120A, 80V, RDS(TYP) = 5.5mΩ@VGS = 10 V
- Low gate charge ( typical 59 n C)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
D2-PAK
I2-PAK
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS
IDM VGSS EAS IAR
TJ, TSTG
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and...
