Datasheet4U Logo Datasheet4U.com

MSI120N08G - 80V N-Channel MOSFET

Description

This Power MOSFET is produced using Maple semi‘s advanced technology.

which provides high performance in on-state resistance, fast switching performance and excellent quality.

MSP120N08G suitable device forSynchronous Rectification For Server and general purpose applications.

Features

  • - 120A, 80V, RDS(TYP) = 5.5mΩ@VGS = 10 V - Low gate charge ( typical 59 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2).

📥 Download Datasheet

Datasheet Details

Part number MSI120N08G
Manufacturer Maple Semiconductor
File Size 758.38 KB
Description 80V N-Channel MOSFET
Datasheet download datasheet MSI120N08G Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MSI2001 USB2.0 High-Speed (480Mbps) Analog Switch MagnaChip
MSI2006 6A Bi-directional Load Switch MagnaChip
MSI2021 Dual SPDT Analog Switch MagnaChip
MSI2206 Dual Channel 6A Load Switch MagnaChip
MSI6000 11-Channel Level Shifter MagnaChip

Other Datasheets by Maple Semiconductor

Part Number Description

Full PDF Text Transcription

Click to expand full text
MSB120N08G / MSI120N08G MSB120N08G/MSI120N08G 80V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced technology. which provides high performance in on-state resistance, fast switching performance and excellent quality. MSP120N08G suitable device forSynchronous Rectification For Server and general purpose applications. LEAD FREE Pb RoHS Features - 120A, 80V, RDS(TYP) = 5.
Published: |