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MSP10120V1 - Silicon Carbide Diode

Key Features

  • -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF.

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Datasheet Details

Part number MSP10120V1
Manufacturer Maple Semiconductor
File Size 297.60 KB
Description Silicon Carbide Diode
Datasheet download datasheet MSP10120V1 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSP10120V1 MSP10120V1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Applications -Switch Mode Power Supplies -Power Factor Correction -Motor Drives -HID Lighting Benefits -Higher safety margin against overvoltage -Improved efficiency all load conditions -Increased efficiency compared to Silicon Diode alternatives -Reduction of Heat Sink Requirements -Parallel Devices Without Thermal Runaway -Essentialy No Switching Losses Package Case Type : TO-220 -2 1、Cathode 2、Anode CA Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VRRM VRSM VDC IF IFRM IFSM