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SLB7N80C Datasheet 800V N-Channel MOSFET

Manufacturer: Maple Semiconductor

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Datasheet Details

Part number SLB7N80C
Manufacturer Maple Semiconductor
File Size 330.12 KB
Description 800V N-Channel MOSFET
Datasheet download datasheet SLB7N80C Datasheet

General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for low voltage applications such as DC/DC converters and high efficiency switching for power management in portable and battery operated products.

Overview

SLB7N80C / SLI7N80C SLB7N80C/SLI7N80C 800V N-Channel MOSFET General.

Key Features

  • - 7.0A, 800V, RDS(on) = 1.9Ω@VGS = 10 V - Low gate charge ( typical 40nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GS D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLB7N80C SLI7N80C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC.

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