SLF2N60UZ Datasheet | Maple Semiconductor

SLP2N60UZ / SLF2N60UZ SLP2N60UZ / SLF2N60UZ 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 2,0A, 600V, RDS(on)typ = 4Ω@VGS = 10 V - Low gate charge ( typical 5.8nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability TO-22...