Datasheet4U Logo Datasheet4U.com

SLF4N65C - N-Channel MOSFET

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 4A, 650V, RDS(on)typ. = 2.32Ω@VGS = 10 V - Low gate charge ( typical 13nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP4N65C SLF4N65C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Ga.

📥 Download Datasheet

Datasheet preview – SLF4N65C

Datasheet Details

Part number SLF4N65C
Manufacturer Maple Semiconductor
File Size 298.21 KB
Description N-Channel MOSFET
Datasheet download datasheet SLF4N65C Datasheet
Additional preview pages of the SLF4N65C datasheet.

📁 Similar Datasheet

Other Datasheets by Maple Semiconductor

Full PDF Text Transcription

Click to expand full text
SLP4N65C / SLF4N65C SLP4N65C / SLF4N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 4A, 650V, RDS(on)typ. = 2.
Published: |