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SLF8N60C - N-Channel MOSFET

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 8A, 600V, RDS(on)typ. = 1.0Ω@VGS = 10 V - Low gate charge ( typical 23nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP8N60C SLF8N60C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gat.

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Datasheet Details

Part number SLF8N60C
Manufacturer Maple Semiconductor
File Size 1.21 MB
Description N-Channel MOSFET
Datasheet download datasheet SLF8N60C Datasheet
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Full PDF Text Transcription

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SLP8N60C / SLF8N60C SLP8N60C / SLF8N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 8A, 600V, RDS(on)typ. = 1.
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