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SLI40N26C - 260V N-Channel MOSFET

General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • - 40A, 260V, RDS(on) typ. = 0.12Ω@VGS = 10 V - Low gate charge ( typical 55 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLB40N26C/SLI40N26C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note.

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Datasheet Details

Part number SLI40N26C
Manufacturer Maple Semiconductor
File Size 351.12 KB
Description 260V N-Channel MOSFET
Datasheet download datasheet SLI40N26C Datasheet

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SLB40N26C/SLI40N26C SLB40N26C / SLI40N26C 260V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 40A, 260V, RDS(on) typ. = 0.