SLI7N60C
Description
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Key Features
- 7.5A, 600V, RDS(on) = 1.2Ω@VGS = 10 V
- Low gate charge ( typical 29nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability D D2-PAK GS GDS I2-PAK G S
