SLP10N80CZ - N-Channel MOSFET

Product Overview

Maple Semiconductor

Datasheet Details

Part number	SLP10N80CZ
Manufacturer	Maple Semiconductor
File Size	397.39 KB
Description	N-Channel MOSFET
Datasheet	SLP10N80CZ Datasheet
Additional preview pages of the SLP10N80CZ datasheet.

SLP10N80CZ Product details

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

- 10A, 800V, RDS(on)Typ. = 0.85Ω@VGS = 10 V - Low gate charge ( typical 63 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability - ESD Improved capability D G GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol Parameter SLP10N80CZ SLF10N80CZ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100.

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Published: Apr 11, 2017 |