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SLP32N20C Datasheet 200v N-channel MOSFET

Manufacturer: Maple Semiconductor

Overview: SLP32N20C / SLF32N20C SLP32N20C / SLF32N20C 200V N-Channel MOSFET General.

General Description

This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Key Features

  • - 32A, 200V, RDS(on) typ. = 0.080Ω@VGS = 10 V - Low gate charge ( typical 50 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP32N20C SLF32N20C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single.

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