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SLP740UZ - N-Channel MOSFET

General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • - 11A, 430V, RDS(on)typ. = 0.53Ω@VGS = 10 V - Low gate charge ( typical 15.7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP740UZ S SLF740UZ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL VESD(G-S) Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (N.

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Datasheet Details

Part number SLP740UZ
Manufacturer Maple Semiconductor
File Size 384.12 KB
Description N-Channel MOSFET
Datasheet download datasheet SLP740UZ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SLP740UZ/SLF740UZ SLP740UZ/SLF740UZ 430V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 11A, 430V, RDS(on)typ. = 0.53Ω@VGS = 10 V - Low gate charge ( typical 15.