SLP7N80C - N-Channel MOSFET

Product Overview

Maple Semiconductor

Datasheet Details

Part number	SLP7N80C
Manufacturer	Maple Semiconductor
File Size	1.80 MB
Description	N-Channel MOSFET
Datasheet	SLP7N80C Datasheet
Additional preview pages of the SLP7N80C datasheet.

SLP7N80C Product details

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

- 7A, 800V, RDS(on)typ. = 1.35Ω@VGS = 10 V - Low gate charge ( typical 38.4nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP7N80C SLF7N80C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1).

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Published: Apr 11, 2017 |