SLS30L03T Datasheet | Maple Semiconductor

Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency. Features - N-Channel: 30V 6A RDS(on)Typ= 18.6mΩ@VGS = 10 V RDS(on))Typ= 30mΩ@VGS = 4..5V - P-Channel: -30V- 6A RDS(on))Typ= 27mΩ@VGS = 10 V RDS(on))Typ= 42mΩ@VGS = 4..5V - Very Low On-resistance RDS(ON) - Low Crss ( typical 5.7p F) - Fast switching - 100% avalanche tested - Improved dv/dt capability SOP-8 P-Channel N-Channel Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS IDM VGSS PD R θJA TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Power Dissipation (TC = 25℃) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds N-Channel P-Channel -30 -6...