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SLS30L03T Datasheet N And P-channel Enhancement Mode MOSFET

Manufacturer: Maple Semiconductor

Overview: SLS30L03T LEAD FREE Pb RoHS SLS30L03T N And P-Channel Enhancement Mode MOSFET.

Datasheet Details

Part number SLS30L03T
Manufacturer Maple Semiconductor
File Size 777.29 KB
Description N And P-Channel Enhancement Mode MOSFET
Datasheet SLS30L03T-MapleSemiconductor.pdf

General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripeTRENCH technology.

This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency.

Key Features

  • - N-Channel: 30V 6A RDS(on)Typ= 18.6mΩ@VGS = 10 V RDS(on))Typ= 30mΩ@VGS = 4..5V - P-Channel: -30V- 6A RDS(on))Typ= 27mΩ@VGS = 10 V RDS(on))Typ= 42mΩ@VGS = 4..5V - Very Low On-resistance RDS(ON) - LowCrss ( typical 5.7pF) - Fast switching - 100% avalanche tested - Improved dv/dt capability SOP-8 P-Channel N-Channel Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS PD R θJA TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - C.

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