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SLU2N65UZ - N-Channel MOSFET

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 1.9A, 650V, RDS(on)typ = 3.45Ω@VGS = 10 V - Low gate charge ( typical 5.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol Parameter SLD2N65UZ / SLU2N65UZ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (N.

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Datasheet Details

Part number SLU2N65UZ
Manufacturer Maple Semiconductor
File Size 909.27 KB
Description N-Channel MOSFET
Datasheet download datasheet SLU2N65UZ Datasheet
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SLD2N65UZ / SLU2N65UZ SLD2N65UZ / SLU2N65UZ 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 1.9A, 650V, RDS(on)typ = 3.45Ω@VGS = 10 V - Low gate charge ( typical 5.
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