SLU50R550SJ Datasheet | Maple Semiconductor

Description This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency. Features - 7.6A, 500V, RDS(on) typ. = 0.5Ω@VGS = 10 V - Low gate charge ( typical 25n C) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D-PAK I-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD50R550SJ/SLU50R550SJ VDSS IDM VGSS EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source...