SLW60R080SS Datasheet | Maple Semiconductor

Description This Power MOSFET is produc Feeadtuurseisng Maple semi‘s Advanced Super-Junction technology. - 7.6A, 500V, RDS(on) typ. = 0.5Ω@VGS = This advanced technology has-b Loewegnateeschpaergcei(atyllpyicatal i2l5onr Ce)d to minimize conduction loss, pr-o Hvigihdreugsgeudpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and mutation m-o Imdpero.ved dv/dt capability These devices are well suited for AC/DC power conversion TO-3P SLW60R080SS 600V N-Channel MOSFET Features - 47A, 600V, RDS(on) typ.= 68mΩ@VGS =10 V - Low gate charge ( typical 88n C) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage Drain Current ID - Continuous (TC = 25℃) - Continuous (TC = 100℃) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source...