Datasheet Details
| Part number | SLW60R080SS |
|---|---|
| Manufacturer | Maple Semiconductor |
| File Size | 612.45 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 SLW60R080SS Datasheet
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General Description
technology.
typ.
Key Features
- - 47A, 600V, RDS(on) typ. = 68mΩ@VGS =10 V - Low gate charge ( typical 88nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage Drain Current ID - Continuous (TC = 25℃) - Continuous (TC = 100℃) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source V.