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Photo Diode
MTD2001M
Features High Reliability Low Dark Current Compact Package
Applications Optical Switches Optical Sensors Optical Detectors
Maximum Ratings (Ta=25 C)
Characteristic Reverse Voltage Power Dissipation Operating Temperature Storage Temperature Junction Temperature Soldering Temperature Symbol VR PD Topr Tstg Tj Tsol Max. 20 70.00 −20~+85 −30 ~+100 100 260 Test Condition Unit − − − − − for 5 sec. max
o
o
V mW
o
C C C C
o o
o
Opto−Electrical Characteristics (Ta=25 C)
Characteristic Open Circuit Voltage Light Current Dark Current Spectral Sensitivity Peak Sensitivity Wavelength Beam Angle Junction Capacitance Symbol VOC IL ID λ λp θ Cj Test Condition Ee=5mW/cm
2 2
Min .35 − − − − − −
Typ − 20.
MTD2001M Datasheet
