DESCRIPTION
MT2501 P- Channel Enhancement Mode MOSFET FEATURES
¾ -100V/-10A, RDS(ON) =205mΩ @ VGS = -10V ¾ -100V/-10A, RDS(ON) =225mΩ @ VGS = -7V ¾ Super high density cell design for extremely ultra low RDS(ON) ¾ Exceptional on-resistance and maximum DC current capability ¾ TO-252 package design PIN CONFIGURATION TO-252(Top Site) D APPLICATIONS
¾ POWER Management ¾ Portable Equipment ¾ DC/DC Converter ¾ Load Switch ¾ DSC Drain 123 G DS Gate Source -1- Ver 1.00 10/21/2009 ABSOLUTE MAXIMUM RATINGS
(TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current A TA = 25℃ TA = 100℃ Avalanche Current Avalanche Energy(L=0.1mH, ID =-12A,RG=25Ω) Repetitive Avalanche Energy B(L=0.05mH) Power Dissipation TA = 25℃ TA = 100℃ Operating junction temperature range Storage temperature range Note A: Pulse width limited by maximum junction temperature. B: Duty cycle ≦ 1%. MT2501 P- Channel Enhancement Mode MOSFET Symbol VDS VGS ID...
Matrix Microtech
