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MT2501 - P-Channel MOSFET

General Description

The MT2501 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • ¾ -100V/-10A, RDS(ON) =205mΩ @ VGS = -10V ¾ -100V/-10A, RDS(ON) =225mΩ @ VGS = -7V ¾ Super high density cell design for extremely ultra low RDS(ON) ¾ Exceptional on-resistance and maximum DC current capability ¾ TO-252 package design ‹ PIN.

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Datasheet Details

Part number MT2501
Manufacturer Matrix Microtech
File Size 363.05 KB
Description P-Channel MOSFET
Datasheet download datasheet MT2501 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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‹ DESCRIPTION MT2501 P- Channel Enhancement Mode MOSFET The MT2501 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.