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MT2502 - N-Channel MOSFET

General Description

The MT2502 is the N-Ch annel logic enhancement m ode power field effect transistor are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON) =150mΩ @ VGS = 10V RDS(ON) =175mΩ @ VGS = 5V ‹.

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Datasheet Details

Part number MT2502
Manufacturer Matrix Microtech
File Size 446.73 KB
Description N-Channel MOSFET
Datasheet download datasheet MT2502 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MT2502 N- Channel Enhancement Mode MOSFET ‹ DESCRIPTION The MT2502 is the N-Ch annel logic enhancement m ode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devi ces a re p articularly suite d for low vo ltage appli cation su ch a s cellular p hone and noteb ook computer power management and oth er Battery powered ci rcuits, and low in -line power loss a re needed in a very small outline surface mount package.