Datasheet Summary
N- Channel Enhancement Mode MOSFET DESCRIPTION
The MT2502 is the N-Ch annel logic enhancement m ode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devi ces a re p articularly suite d for low vo ltage appli cation su ch a s cellular p hone and noteb ook puter power management and oth er Battery powered ci rcuits, and low in -line power loss a re needed in a very small outline surface mount package.
Features
RDS(ON) =150mΩ @ VGS = 10V RDS(ON) =175mΩ @ VGS = 5V
APPLICATIONS
Management
¾ 100V/10A, ¾ 100V/10A, ¾ ¾ ¾
¾ POWER ¾ Port ¾ DC/ ¾...
