ME15N25-G - N-Channel 250V (D-S) MOSFET

Matsuki

Download the ME15N25-G datasheet PDF. This datasheet also covers the ME15N25 variant, as both devices belong to the same n-channel 250v (d-s) mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME15N25 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application.

Key Features

RDS(ON)≦265mΩ@VGS=10V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

ME15N25-G n-channel 250v (d-s) mosfet by Matsuki - Datasheet Preview — Note: The manufacturer provides a single datasheet file (ME15N25-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	ME15N25-G
Manufacturer	Matsuki
File Size	1.08 MB
Description	N-Channel 250V (D-S) MOSFET
Datasheet	ME15N25-G Datasheet

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Other Datasheets by Matsuki

Part Number	Description
ME15N25	N-Channel 250V (D-S) MOSFET
ME15N25F	N-Channel 250V (D-S) MOSFET
ME15N25F-G	N-Channel 250V (D-S) MOSFET
ME15N10	N-Channel 100-V (D-S) MOSFET
ME15N10-G	N-Channel 100-V (D-S) MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

ME15N25/ME15N25-G N- Channel 250V (D-S) MOSFET GENERAL DESCRIPTION The ME15N25 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application.