Datasheet Summary
ME15N25/ME15N25-G
N- Channel 250V (D-S) MOSFET
GENERAL DESCRIPTION
The ME15N25 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application.
Features
- RDS(ON)≦265mΩ@VGS=10V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- DC/DC Converter
- Load Switch
- LCD/ LED Display inverter
PIN CONFIGURATION
(TO-252-3L) Top View
- The Ordering Information: ME15N25 (Pb-free) ME15N25-G (Green...
