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ME15N25F - N-Channel 250V (D-S) MOSFET

General Description

The ME15N25F is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on state resistance.

Key Features

  • RDS(ON)≦220mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME15N25F
Manufacturer Matsuki
File Size 892.23 KB
Description N-Channel 250V (D-S) MOSFET
Datasheet download datasheet ME15N25F Datasheet

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N-Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION The ME15N25F is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance.