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ME20P03F-G - P-Channel MOSFET

This page provides the datasheet information for the ME20P03F-G, a member of the ME20P03F P-Channel MOSFET family.

Product Overview

Matsuki

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ME20P03F-G P-Channel MOSFET by Matsuki - Datasheet Preview — Datasheet preview – ME20P03F-G

Datasheet Details

Part number	ME20P03F-G
Manufacturer	Matsuki
File Size	904.75 KB
Description	P-Channel MOSFET
Datasheet	ME20P03F-G Datasheet
Additional preview pages of the ME20P03F-G datasheet.

ME20P03F-G Product details

Description

The ME20P03F is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application.

Features

RDS(ON)≦31.5mΩ@VGS=-10V.
RDS(ON)≦44mΩ@VGS=-4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Mar 21, 2018 |