ME20P03F-G Datasheet | Matsuki

DESCRIPTION The ME20P03F is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. PIN CONFIGURATION FEATURES - RDS(ON)≦31.5mΩ@VGS=-10V - RDS(ON)≦44mΩ@VGS=-4.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability APPLICATIONS - Power Management in Note book - DC/DC Converter - Load Switch - LCD Display inverter (TO-220F) Top View - The Ordering Information: ME20P03F (Pb-free) ME4 ME20P03F-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Maximum Ratings Drain-Source Voltage VDS -30 Gate-Source Voltage Continuous Drain Current TC=25℃ TC=70℃ VGS...