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ME20P03F - P-Channel MOSFET

General Description

The ME20P03F is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application.

Key Features

  • RDS(ON)≦31.5mΩ@VGS=-10V.
  • RDS(ON)≦44mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME20P03F
Manufacturer Matsuki
File Size 904.75 KB
Description P-Channel MOSFET
Datasheet download datasheet ME20P03F Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel 30V (D-S) MOSFET ME20P03F/ME20P03F-G GENERAL DESCRIPTION The ME20P03F is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. PIN CONFIGURATION FEATURES ● RDS(ON)≦31.5mΩ@VGS=-10V ● RDS(ON)≦44mΩ@VGS=-4.